Laser irradiation method, laser irradiation apparatus, and method of manufacturing a semiconductor device

ABSTRACT

Attenuation regions of laser light are removed or reduced in size using a slit located in the immediate vicinity of a surface to be irradiated so that a steep energy distribution is obtained in the end portions of the laser light. The reason why the slit is located in the immediate vicinity of the surface to be irradiated is to suppress the spread of the laser light. In addition, the attenuation regions of the laser light are folded by using a mirror instead of the slit to increase energy densities in the attenuation regions by one another so that a steep energy density distribution is obtained in the end portions of the laser light.

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The present invention relates to a laser irradiation method and alaser irradiation apparatus for using the method (apparatus including alaser and an optical system for guiding laser light emitted from thelaser to an object to be irradiated). In addition, the present inventionrelates to a method of manufacturing a semiconductor device, whichincludes a laser light irradiation step. Note that a semiconductordevice described here includes an electro-optical device such as aliquid crystal display device or a light emitting device and anelectronic device which includes the electro-optical device as a part.

[0003] 2. Description of the Related Art

[0004] In recent years, a wide study has been made on a technique inwhich laser annealing is performed for a semiconductor film formed on aninsulating substrate made of glass or the like, to crystallize the film,to improve its crystallinity so that a crystalline semiconductor film isobtained, or to activate an impurity element. Note that a crystallinesemiconductor film in this specification indicates a semiconductor filmin which a crystallized region is present, and also includes asemiconductor film which is crystallized as a whole.

[0005] A method of forming pulse laser light from an excimer laser orthe like by an optical system such that it becomes a square spot ofseveral cm or a linear shape of 100 mm or more in length on a surface tobe irradiated, and scanning the laser light (or relatively shifting anirradiation position of the laser light with respect to the surface tobe irradiated) to conduct annealing is superior in mass productivity andis excellent in technology. The “linear shape” described here means nota “line” in the strict sense but a rectangle (or a prolate ellipsoidshape) having a high aspect ratio. For example, it indicates a shapehaving an aspect ratio of 10 or more (preferably, 100 to 10000). Notethat the linear shape is used to obtain an energy density required forsufficiently annealing an object to be irradiated. Thus, if sufficientannealing is conducted for the object to be irradiated, it may be arectangular shape or a sheet shape. Under the present conditions, anexcimer laser of 15 J/pulse is on the market. In the future, there isalso a possibility that annealing with sheet shaped laser light isconducted.

[0006]FIGS. 7A and 7B show an example of a configuration of an opticalsystem for forming laser light in a linear shape on a surface to beirradiated. This configuration is extremely general. All optical systemsdescribed above are based on the configuration shown in FIGS. 7A and 7B.According to the configuration, a cross sectional shape of laser lightis converted into a linear shape, and simultaneously an energy densitydistribution of laser light on the surface to be irradiated ishomogenized. In general, an optical system for homogenizing the energydensity distribution of laser light is called a beam homogenizer.

[0007] Laser light emitted from a laser 101 is divided in a directionperpendicular to a traveling direction thereof by a cylindrical lensgroup (hereinafter referred to as a cylindrical lens array) 103, therebydetermining a length of linear laser light in a longitudinal direction.The direction is called a first direction in this specification. It isassumed that, when a mirror is inserted in a course of an opticalsystem, the first direction is changed in accordance with a direction oflight bent by the mirror. In the configuration shown in the top view ofFIG. 7A, the cylindrical lens array is divided into seven parts. Then,the laser lights are synthesized on a surface to be irradiated 109 by acylindrical lens 105, thereby homogenizing an energy densitydistribution of the linear laser light in the longitudinal direction.

[0008] Next, the configuration shown in the cross sectional view of FIG.7B will be described. Laser light emitted from a laser 101 is divided ina direction perpendicular to a traveling direction thereof and the firstdirection by cylindrical lens arrays 102 a and 102 b, therebydetermining a length of linear laser light in a width direction. Thedirection is called a second direction in this specification. It isassumed that, when a mirror is inserted in a course of an opticalsystem, the second direction is changed in accordance with a directionof light bent by the mirror. In the cross sectional view of FIG. 7B, thecylindrical lens arrays 102 a and 102 b each are divided into fourparts. The divided laser lights are temporarily synthesized by acylindrical lens 104. After that, the laser lights are reflected by amirror 107 and then condensed by a doublet cylindrical lens 108 so thatthey become again single laser light on the surface to be irradiated109. The doublet cylindrical lens 108 is a lens composed of twocylindrical lenses. Thus, an energy density distribution of the linearlaser light in a width direction is homogenized.

[0009] For example, an excimer laser in which a size in a laser windowis 10 mm×30 mm (which each are a half-width in beam profile) is used asthe laser 101 and laser light is produced by the optical system havingthe configuration shown in FIGS. 7A and 7B. Then, linear laser lightwhich has a uniform energy density distribution and a size of 125 mm×0.4mm can be obtained on the surface to be irradiated 109.

[0010] At this time, when, for example, quartz is used for all basematerials of the optical system, high transmittance is obtained. Notethat coating is preferably conducted for the optical system such thattransmittance of 99% or more is obtained at a frequency of the usedexcimer laser.

[0011] Then, the linear laser light formed by the above configuration isirradiated with an overlap state while being gradually shifted in awidth direction thereof. Thus, when laser annealing is performed for theentire surface of an amorphous semiconductor film, the amorphoussemiconductor film can be crystallized, crystallinity can be improved toobtain a crystalline semiconductor film, or an impurity element can beactivated.

[0012] Also, an area of a substrate used for manufacturing asemiconductor device is being increased more and more. This is becausehigh throughput and a low cost can be realized in the case where aplurality of semiconductor devices such as liquid crystal display devicepanels are manufactured from a single large area substrate as comparedwith, for example, the case where TFTs for a pixel portion and drivercircuits (source driver portion and gate driver portion) are formed on asingle glass substrate, thereby manufacturing a single semiconductordevice such as a liquid crystal display device panel (FIG. 9). At thepresent time, for example, a substrate of 600 mm×720 mm, a circularsubstrate of 12 inches (about 300 mm in diameter), etc. are used as thelarge area substrate. Further, it is expected that a substrate in whicha length of one side exceeds 1000 mm will be also used in future.

[0013] In end portions of linear, rectangular shaped, or sheet shapedlaser light produced on the surface to be irradiated or its vicinity bythe optical system, an energy density is gradually attenuated by anaberration of a lens or the like (FIG. 8A). In this specification,regions in which an energy density is gradually attenuated in endportions of linear, rectangular shaped, or sheet shaped laser light iscalled attenuation regions.

[0014] Also, with increase in an area of a substrate and an output of alaser, longer linear laser light, longer rectangular-shaped laser light,and larger sheet-shaped laser light are being produced. This is becausehigh efficiency is obtained in the case where annealing using such laserlight is conducted. However, an energy density in end portions of laserlight emitted from an oscillating laser is lower than that in asubstantially central region thereof. Thus, when an area of the laserlight is expanded to be equal to or larger than an area up to now by theoptical system, the attenuation regions tend to be increasinglynoticeable.

[0015] In the attenuation regions of laser light, the energy density isinsufficient as compared with a region having high homogeneity of anenergy density and is gradually attenuated. Thus, when annealing isconducted using laser light having the attenuation regions, uniformannealing cannot be conducted for an object to be irradiated (FIG. 8B).In addition, even when annealing is conducted by a method of performingscanning with attenuation region overlapping of the laser light, theannealing condition is distinctly different from that for the regionhaving the high homogeneity of the energy density. Thus, uniformannealing cannot be still conducted for the object to be irradiated.Therefore, the same treatment cannot be conducted for a region of theobject annealed by the attenuation regions of the laser light andanother region of the object annealed by the region of the laser lighthaving the high homogeneity of the energy density.

[0016] For example, when the object to be irradiated is a semiconductorfilm, crystallinity of a region of the film annealed by the attenuationregions of the laser light is different from that of another region ofthe film annealed by the region of the laser light having the highhomogeneity of the energy density. Thus, even when TFTs are manufacturedfrom such a semiconductor film, electrical characteristics of TFTsmanufactured from the region of the film annealed by the attenuationregions of the laser light are deteriorated and this becomes a factorfor causing a variation of TFTs on the same substrate. Actually, thereis almost no such a case where the TFTs are manufactured from the regionof the film annealed by the attenuation regions of the laser light toproduce a semiconductor device. Thus, this becomes a factor fordecreasing the number of usable TFTs per substrate, thereby reducingthroughput.

SUMMARY OF THE INVENTION

[0017] Therefore, an object of the present invention is to provide alaser irradiation apparatus capable of removing attenuation regions inend portions of laser light to conduct annealing at high efficiency. Inaddition, an object of the present invention is to provide a laserirradiation method using such a laser irradiation apparatus and a methodof manufacturing a semiconductor device, which includes a stepcorresponding to the laser irradiation method.

[0018] According to the present invention, as shown in FIG. 1A,attenuation regions of laser light, particularly, attenuation regions inportions of the laser light parallel to a shift direction thereof areremoved or reduced using a slit located in the immediate vicinity of asurface to be irradiated so that a steep energy density distribution isobtained in the end portions of the laser light as shown in FIG. 2A. Thereason why the slit is located in the immediate vicinity of the surfaceto be irradiated is to suppress the spread of the laser light. Thus, theslit is closed to a substrate within a permissible range of an apparatus(typically, within 1 cm). The slit may be located in contact with thesurface to be irradiated. Further, according to the present invention,the attenuation regions of the laser light are folded by using a mirroras shown in FIG. 1B to increase energy densities in the attenuationregions and to reduce areas of the attenuation regions so that a steepenergy density distribution is obtained in the end portions of the laserlight.

[0019] If steep attenuation regions are obtained in the end portions ofthe laser light, particularly, in portions of the laser light parallelto a shift direction thereof, the laser light has high homogeneity ofthe energy density so that uniform annealing can be conducted for theobject to be irradiated and efficient annealing is possible (FIG. 2B).

[0020] According to a structure of a laser irradiation apparatusdisclosed in this specification, the laser irradiation apparatus ischaracterized by comprising: a laser; first means for converting a firstenergy density distribution of laser light emitted from the laser on asurface to be irradiated into a second energy density distribution; andsecond means for homogenizing an energy density in an end portion of thelaser light having the second energy density distribution, in which thesecond means is provided between the surface to be irradiated and thefirst means.

[0021] Also, according to another structure of the laser irradiationapparatus disclosed in this specification, the laser irradiationapparatus is characterized by comprising: a laser; first means forchanging a sectional shape of laser light emitted from the laser into afirst shape to irradiate it to a surface to be irradiated; and secondmeans for homogenizing an energy density in an end portion of the laserlight which is changed into the first shape, in which the second meansis provided between the optical system and the surface to be irradiated.

[0022] Also, according to a structure of a laser irradiation methoddisclosed in this specification, the laser irradiation method ischaracterized by comprising: converting a first energy densitydistribution of laser light emitted from a laser on a surface to beirradiated into a second energy density distribution by first means; andhomogenizing an energy density in an end portion of the laser lighthaving the second energy density distribution by second means andirradiating laser light having the homogenized energy density to thesurface to be irradiated while relatively shifted.

[0023] Also, according to another structure of the laser irradiationmethod disclosed in this specification, the laser irradiation method ischaracterized by comprising: changing a sectional shape of laser lightemitted from a laser into a first shape by first means to irradiate itto a surface to be irradiated; and homogenizing an energy density in anend portion of the laser light which is changed into the first shape bysecond means and irradiating laser light having the homogenized energydensity to the surface to be irradiated while relatively shifted.

[0024] Furthermore, according to a structure of a method ofmanufacturing a semiconductor device disclosed in this specification,the manufacturing method is characterized by comprising: converting afirst energy density distribution of laser light emitted from a laser ona surface to be irradiated into a second energy density distribution byfirst means; and homogenizing an energy density in an end portion of thelaser light having the second energy density distribution by secondmeans and irradiating laser light having the homogenized energy densityto the surface to be irradiated while relatively shifted.

[0025] Also, according to another structure of method of manufacturing asemiconductor device disclosed in this specification, the manufacturingmethod is characterized by comprising: changing a sectional shape oflaser light emitted from a laser into a first shape by first means toirradiate it to a surface to be irradiated; and homogenizing an energydensity in an end portion of the laser light which is changed into thefirst shape by second means and irradiating laser light having thehomogenized energy density to the surface to be irradiated whilerelatively shifted.

[0026] Also, in the above structure, it is characterized in that thefirst means is a homogenizer located to be orthogonal to an optical axisof the laser light.

[0027] Also, in the above structure, it is characterized in that thefirst means is a plurality of cylindrical lens arrays which are arrangedin parallel so as to be orthogonal to an optical axis of the laser lightand divide the laser light in the arrangement directions.

[0028] Also, in the above structure, it is characterized in that theoptical system is composed of a plurality of cylindrical lens groups anda lens, the cylindrical lens groups are arranged in parallel so as to beorthogonal to an optical axis of the laser light and divide the laserlight in the arrangement directions, and the lens is located in atransmission side of the cylindrical lens groups and synthesizes thedivided laser lights.

[0029] Also, in the above structure, it is characterized in that thefirst means is a fly eye lens which is located to be orthogonal to anoptical axis of the laser light and divides the laser light.

[0030] Also, in the above structure, it is characterized in that thefirst means is composed of a fly eye lens and a spherical lens, the flyeye lens is located to be orthogonal to an optical axis of the laserlight and divides the laser light, and the spherical lens is located ina transmission side of the fly eye lens and synthesizes the dividedlaser lights.

[0031] Also, in the above structure, it is characterized in that thesecond means is one of a slit or a mirror, the slit is located adjacentto the surface to be irradiated, and the mirror is located correspondingto the end portion of the laser light having the second energy densitydistribution.

[0032] Also, in the above structure, it is characterized in that the endportion of the laser light is a region parallel to a shift direction ofthe laser light.

[0033] According to the above structure, the laser light may beconverted into a harmonic by a non-linear optical element. For example,it is known that a YAG laser emits laser light having a wavelength of1065 nm as a fundamental wave. An absorption coefficient of the laserlight to a silicon film is very low. Thus, at this rate, it istechnically difficult to crystallize an amorphous silicon film as one ofsemiconductor films. However, the laser light can be converted intolight having a shorter wavelength by using a non-linear optical element.As harmonic, there is the second harmonic (532 nm), the third harmonic(355 nm), the fourth harmonic (266 nm), or the fifth harmonic (213 nm).These harmonics have a high absorption coefficient to an amorphoussilicon film. Thus, they can be used for crystallizing the amorphoussilicon film.

[0034] In the above structure, it is characterized in that the laser isone selected from the group consisting of a continuous oscillation solidlaser, a continuous oscillation gas laser, a pulse oscillation solidlaser, and a pulse oscillation gas laser. Note that, as the solid laser,there are enumerated a YAG laser, a YVO₄ laser, a YLF laser, a YAlO₃laser, a glass laser, a ruby laser, an alexandrite laser, a Ti: sapphirelaser, and the like, and as the gas laser, there are exemplified anexcimer laser, an Ar laser, a Kr laser, and the like.

[0035] Also, in the above structure, the laser light may be convertedinto a harmonic by a non-linear optical element.

[0036] In the above structure, it is characterized in that the laser isone selected from the group consisting of a continuous oscillation solidlaser, a continuous oscillation gas laser, a pulse oscillation solidlaser, and a pulse oscillation gas laser. Note that, as the solid laser,there are enumerated a YAG laser, a YVO₄ laser, a YLF laser, a YAlO₃laser, a glass laser, a ruby laser, an alexandrite laser, a Ti: sapphirelaser, and the like, and as the gas laser, there are exemplified anexcimer laser, an Ar laser, a Kr laser, and the like.

[0037] The slit is located in the immediate vicinity of the surface tobe irradiated or on the surface to be irradiated or when the mirror islocated in the attenuation regions of the laser light, typically, nearthe middle of the attenuation regions. Thus, superior homogeneity of anenergy density distribution of the laser light on the surface to beirradiated or in its vicinity can be obtained so that uniform annealingcan be conducted for the object to be irradiated.

[0038] Up to now, the divided laser lights are synthesized by thecylindrical lens 105 shown in FIGS. 7A and 7B to reduce the attenuationregions. According to the present invention, even when the cylindricallens 105 is not provided to the optical system, a steep energy densitydistribution can be obtained in the end portions of the laser light.Thus, the number of lens used for the optical system is decreased sothat optical adjustment is easy, and uniform annealing can be conducted.Note that, when the cylindrical lens 105 is used, the attenuationregions of the laser light can be reduced. Thus, areas of the laserlight irradiated to, the slit located in the immediate vicinity of thesurface to be irradiated or in contact with the surface to beirradiated, or the mirror located near the middle of the attenuationregions of the laser light, can be reduced. As a result, there is aneffect that a mirror or a slit which has a smaller size can be used.

[0039] The uniform annealing is very important in order to uniform aproperty of the object to be irradiated. In addition, the presentinvention is particularly effective in the case where a large areasubstrate is annealed. For example, when laser light having a widthshorter than a length of the large area substrate is irradiated toanneal the object to be irradiated, it is necessary to conduct relativescanning to the large area substrate plural times for annealing. Thelaser light produced by the present invention has a very superior energydistribution particularly in portions of the laser light parallel to ashift direction thereof. Thus, even in an adjacent portion of regionsscanned by the laser light, annealing can be uniformly conducted. As aresult, no variation in annealing is caused in any portion of the largearea substrate so that it can be utilized without waste and throughputcan be improved. For example, when a semiconductor film is formed on thelarge area substrate, a property of the semiconductor film produced byuniform annealing becomes uniform. Therefore, a variation incharacteristics of TFTs manufactured from such a semiconductor film canbe reduced. In addition, an operating characteristic and reliability ofa semiconductor device manufactured from such TFTs can be improved.

BRIEF DESCRIPTION OF THE DRAWINGS

[0040] In the accompanying drawings:

[0041]FIG. 1A shows an example of an optical path in the case where aslit is located and FIG. 1B shows an example of an optical path in thecase where a mirror is located;

[0042]FIG. 2A shows an example of an energy density distribution oflaser light according to the present invention and FIG. 2B shows anexample in which a large area substrate is annealed using the laserlight shown in FIG. 2A;

[0043]FIGS. 3A and 3B show an example of an optical system of thepresent invention;

[0044]FIG. 4 shows an example of an optical system of the presentinvention;

[0045]FIGS. 5A to 5F show an example of a fly eye lens;

[0046]FIGS. 6A and 6B show an example in which a large area substrate isannealed using laser light produced by the present invention;

[0047]FIGS. 7A and 7B are a top view and a cross sectional view of anexample of a conventional optical system;

[0048]FIG. 8A shows an example of an energy density distribution oflaser light produced by the conventional optical system and FIG. 8Bshows an example in which a large area substrate is annealed using thelaser light shown in FIG. 8A;

[0049]FIG. 9A and 9B show an example of a large area substrate;

[0050]FIGS. 10A to 10C are sectional views showing steps ofmanufacturing pixel TFTs and driver circuit TFTs;

[0051]FIGS. 11A to 11C are sectional views showing steps ofmanufacturing the pixel TFTs and the driver circuit TFTs;

[0052]FIG. 12 is a sectional view showing steps of manufacturing thepixel TFTs and the driver circuit TFTs;

[0053]FIG. 13 is a top view showing a structure of the pixel TFT;

[0054]FIG. 14 is a sectional view of an active matrix liquid crystaldisplay device;

[0055]FIG. 15 is a sectional structure view showing a driver circuit anda pixel portion of a light emitting device;

[0056]FIGS. 16A to 16F show examples of semiconductor devices;

[0057]FIGS. 17A to 17D show examples of semiconductor devices;

[0058]FIGS. 18A to 18C show examples of semiconductor devices; and

[0059]FIG. 19 shows an example of a homogenizer.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment Mode

[0060] In this embodiment mode, a method of removing attenuation regionsby a slit will be described using FIGS. 3A and 3B. FIG. 3A shows anoptical system in the case where a longitudinal direction is viewed froma direction perpendicular thereto and FIG. 3B shows the optical systemin the case where a width direction is viewed from a directionperpendicular thereto.

[0061] Laser light emitted from a laser 1101 is expanded by a beamexpander (1102 a and 1102 b) in both the longitudinal direction and thewidth direction by about two times. Note that the beam expander isparticularly effective in the case where a size of the laser lightemitted from the laser is small. It may not be used according to a sizeor the like of the laser light.

[0062] The laser light emitted from the beam expander is incident intocylindrical lens arrays 1103 a and 1103 b and a cylindrical lens 1104 asfirst forming means. These three lenses are disposed such that acurvature of the laser light is parallel to the longitudinal directionthereof. Thus, an energy density distribution of the laser light ishomogenized in the longitudinal direction.

[0063] The laser light emitted from the cylindrical lens 1104 isincident into a doublet cylindrical lens 1107, which is composed ofcylindrical lens arrays 1105 a and 1105 b, a cylindrical lens 1106, andtwo cylindrical lenses 1107 a and 1107 b, as third forming means. Theselenses are disposed such that a curvature of the laser light is parallelto the width direction thereof. Thus, an energy density distribution ofthe laser light is homogenized in the width direction and simultaneouslya width thereof is shortened.

[0064] Then, a slit 1108 is located as a second forming means in theimmediate vicinity of a surface to be irradiated. A width and a positionof the slit 1108 is set such that an attenuation regions of the laserlight are shielded by the slit 1108 and thereby do not reach a surfaceto be irradiated 1109. Thus, linear laser light having a steep energydensity distribution in end portions thereof can be obtained.

[0065] When a semiconductor film is annealed using such a laserirradiation apparatus, it can be crystallized, crystallinity can beimproved to obtain a crystalline semiconductor film, or an impurityelement can be activated.

[0066] The slit is used in this embodiment mode. However, the presentinvention is not limited to this, and a mirror can also be used. Whenthe mirror is used and located in the attenuation regions of the laserlight, particularly, in the attenuation regions in portions of the laserlight parallel to a shift direction thereof, typically, near the middleof the respective attenuation regions in a width direction, the laserlight is reflected near the central portion of the respectiveattenuation regions. Energy densities of a non-reflecting area and areflecting area in the attenuation regions are synthesized. Thus, thesame energy density as a region having a homogenous energy densitydistribution can be obtained.

[0067] Also, when coating applied on a surface of synthetic quartz glassis changed for a suitable one in accordance with a wavelength of a laserused, various lasers can be applied to the present invention.

[0068] Note that laser light whose shape on a surface to be irradiatedbecomes linear is produced in this embodiment mode. However, the presentinvention is not limited to a linear shape. In addition, the shape ischanged depending on a kind of laser light emitted from a laser. Thus,even if laser light is formed by the optical system, it is easy toreceive the influence of an original shape. For example, laser lightemitted from a XeCl excimer laser (308 nm in wavelength and 30 ns inpulse width) has a rectangular shape of 10 mm×30 mm (which each are ahalf-width in beam profile). With respect to a shape of laser lightemitted from a solid laser, when a rod shape is cylindrical, the shapeof laser light becomes circular. In addition, in the case of a slabtype, the shape of laser light is rectangular. In any shape, if thelaser light has an energy density enough to anneal an object to beirradiated, there is no problem and the present invention can beapplied.

[0069] The present invention made by the above constitutions will bedescribed in more detail through the following embodiments.

Embodiment 1

[0070] In this embodiment, a method of obtaining a steep energy densitydistribution in end portions of linear laser light by using a slit willbe described using FIGS. 3A and 3B. FIG. 3A shows an optical system inthe case where a longitudinal direction of laser light is viewed from adirection perpendicular thereto and FIG. 3B shows the optical system inthe case where a width direction of laser light is viewed from adirection perpendicular thereto.

[0071] Note that in the description related to an arrangement of lensesin this specification, it is assumed that the front is a traveldirection of laser light. In addition, with respect to the lenses, it isassumed that a laser light incident side surface is a first surface andan emission side surface is a second surface. A radius of curvature ofthe first surface is indicated by R₁ and a curvature radius of thesecond surface is indicated by R₂. A sign of the used radius ofcurvature is negative in the case where a center of curvature is locatedon a laser light incident side when it is viewed from the lens. Inaddition, the sign is positive in the case where the center of curvatureis located on an emission side. In the case of a plane, ∞ is assumed.Further, all lenses used are made of synthesis quartz glass (1.485634 inrefractive index). However, the present invention is not limited tothis.

[0072] Laser light emitted from a laser 1101 is expanded by a beamexpander in both the longitudinal direction and the width direction byabout two times. The beam expander is composed of a spherical lens (50mm in radius, 7 mm in thickness, R₁=−220 mm, and R₂=∞) 1102 a and aspherical lens (50 mm in radius, 7 mm in thickness, R₁=∞, and R₂=−400mm) 1102 b which is located at a distance of 400 mm from the sphericallens 1102 a.

[0073] The laser light emitted from the beam expander is incident into acylindrical lens array 1103 a which is located at a distance of 50 mmfrom the spherical lens 1102 b of the beam expander toward the front.After that, the laser light is transmitted through a cylindrical lensarray 1103 b which is located at a distance of 88 mm from thecylindrical lens array 1103 a toward the front, and then incident into acylindrical lens 1104 which is located at a distance of 120 mm from thecylindrical lens array 1103 b toward the front. The cylindrical lensarray 1103 a includes 40 cylindrical lenses (each having 60 mm inlength, 2 mm in width, 5 mm in thickness, R₁=28 mm, and R₂=∞) located inarray. The cylindrical lens array 1103 b includes 40 cylindrical lenses(each having 60 mm in length, 2 mm in width, 5 mm in thickness,R₁=−13.33 mm, and R₂=∞) located in array. The cylindrical lens 1104 is acylindrical lens having 150 mm in length, 60 mm in width, 20 mm inthickness, R₁=2140 mm, and R₂=∞. The cylindrical lens arrays 1103 a and1103 b and the cylindrical lens 1104 each are disposed such that thecurvature is parallel to the longitudinal direction. A light beam isdivided by the cylindrical lens arrays 1103 a and 1103 b. The dividedlight beams are overlapped with each other by the cylindrical lens 1104to homogenize an energy density distribution. Thus, the energy densitydistribution of the laser light is homogenized in the longitudinaldirection by these three lenses.

[0074] The laser light emitted from the cylindrical lens 1104 isincident into a cylindrical lens array 1105 a which is located at adistance of 395 mm from the cylindrical lens 1104 toward the front.After that, the laser light is transmitted through a cylindrical lensarray 1105 b which is located at a distance of 65 mm from thecylindrical lens array 1105 a toward the front, and then incident into acylindrical lens 1106 which is located at a distance of 1600 mm from thecylindrical lens array 1105 b toward the front. The cylindrical lensarray 1105 a includes 16 cylindrical lenses (each having 150 mm inlength, 2 mm in width, 5 mm in thickness, R₁=100 mm, and R₂=∞) locatedin array. The cylindrical lens array 1105 b includes 16 cylindricallenses (each having 150 mm in length, 2 mm in width, 5 mm in thickness,R₁=∞, and R₂=80 mm) located in array. The cylindrical lens 1106 is acylindrical lens having 900 mm in length, 60 mm in width, 20 mm inthickness, R₁=∞, and R₂=−486 mm. The cylindrical lens arrays 1105 a and1105 b and the cylindrical lens 1106 each are disposed such that thecurvature is parallel to the width direction. By these three lenses, anenergy density distribution of the laser light is homogenized in thewidth direction and simultaneously a width thereof is shortened. Thus,linear laser light having a width of 2 mm is produced at a distance of800 mm from the cylindrical lens 1106 toward the front.

[0075] In order to further shorten the above linear laser light havingthe width of 2 mm, a doublet cylindrical lens 1107 is located at adistance of 2050 mm from the cylindrical lens 1106 toward the front. Thedoublet cylindrical lens 1107 is composed of two cylindrical lenses 1107a and 1107 b. The cylindrical lens 1107 a is a cylindrical lens having400 mm in length, 70 mm in width, 10 mm in thickness, R₁=125 mm, andR₂=77 mm. The cylindrical lens 1107 b is a cylindrical lens having 400mm in length, 70 mm in width, 10 mm in thickness, R₁=97 mm, and R₂=−200mm. In addition, the cylindrical lenses 1107 a and 1107 b are located atan interval of 5.5 mm. The cylindrical lenses 1107 a and 1107 b each aredisposed such that the curvature is parallel to the width direction.

[0076] Linear laser light having 300 mm in length and 0.4 mm in width isproduced on a surface 1109 at a distance of 237.7 mm from the doubletcylindrical lens 1107 toward the front. At this time, the producedlinear laser light has an energy density distribution in which endportions thereof in the longitudinal direction are gradually attenuated.In order to remove such energy attenuation regions, a slit 1108 islocated in the immediate vicinity of the surface to be irradiated. Awidth and a position of the slit 1108 are set such that light beamscorresponding to the energy attenuation regions are blocked by the slit1108 and thereby do not reach the surface to be irradiated 1109. Thus,linear laser light having a steep energy density distribution in endportions thereof can be obtained. In this embodiment, the slit islocated at a distance of 2 mm from a substrate.

[0077] Also, instead of three lenses, that is, the cylindrical lensarrays 1103 a and 1103 b and the cylindrical lens 1104 or thecylindrical lens arrays 1105 a and 1105 b and the cylindrical lens 1106,a homogenizer shown in FIG. 19 may be used. Also when such a homogenizeris used, laser light on the surface to be irradiated or at its vicinityhas attenuation regions in end portions. Thus, the slit is provided,thereby removing the attenuation regions to produce linear laser lighthaving a steep energy density distribution.

[0078] When such a laser irradiation apparatus is used, uniformannealing can be conducted for the surface to be irradiated. Forexample, when annealing is conducted using a semiconductor film as anobject to be irradiated, it can be crystallized, crystallinity can beimproved to obtain a semiconductor film having uniform crystallinity, oran impurity element can be activated.

Embodiment 2

[0079] In this embodiment, a method of obtaining a steep energy densitydistribution in end portions of linear laser light by using a mirrorwill be described.

[0080] Linear laser light is produced by the optical system described inEmbodiment 1. Note that, as shown in FIG. 1B, a mirror is provided onside surfaces of a slit and located near substantially central portionsof energy attenuation regions. The light beams of the energy attenuationregions are reflected by the mirror to irradiate remaining energyattenuation regions. Thus, the attenuation regions are reduced so thatthe linear laser light having a steep energy density distribution in theend portions thereof is produced on the surface to be irradiated.

[0081] When such a laser irradiation apparatus is used, uniformannealing can be conducted for the surface to be irradiated. Forexample, when annealing is conducted using a semiconductor film as anobject to be irradiated, it can be crystallized, crystallinity can beimproved to obtain a crystalline semiconductor film having uniformcrystallinity, or an impurity element can be activated.

Embodiment 3

[0082] In this embodiment, a method of obtaining a steep energy densitydistribution in end portions of sheet shaped laser light will bedescribed using FIGS. 4, 5A to 5F.

[0083] Laser light emitted from a laser 1101 is incident into a fly eyelens 1302. Note that, in order to set an aspect ratio of the incidentlaser light to 1:1, a cylindrical lens may be inserted as a beamexpander between an oscillation apparatus and the fly eye lens. The flyeye lens 1302 is obtained by arranging spherical lenses each havingR₁=10 mm, and R₂=∞, 5 mm in thickness, and 1 mm in square, as shown inFIG. 5A. Note that an arrangement of such an array is optimized tohomogenize the energy distribution depending on a shape of the incidentlaser light (arrangement example: FIG. 5B). In addition, in order tomake the array to be geometrically similar to a semiconductor film to beannealed, it is considered that a shape as shown in, for example, FIG.5C (rectangle), FIG. 5D (parallelogram), FIG. 5E (rhombus), or FIG. 5F(regular hexagon) is used. A spherical lens 1303 is located at adistance of 20 mm from fly eye lens 1302 toward the front. The sphericallens 1303 has R₁=300 mm, and R₂=∞, 20 mm in thickness, and 150 mm insquare.

[0084] The light beams divided by the fly eye lens 1302 are overlappedwith each other by the spherical lens 1303. Thus, sheet shaped laserlight of 30 mm×30 mm whose energy distribution is homogenized isproduced on a surface to be irradiated 1305 at a distance of 600 mm fromthe fly eye lens 1302 toward the front. At this time, with respect tothe produced sheet shaped laser light, energies in the end portions areattenuated. Therefore, in order to remove this, a slit 1304 is locatedin the immediate vicinity of the surface to be irradiated. FIG. 4 showsthe slit 1304 when it is viewed from a light beam incident side. A widthand a position of the slit 1304 are set such that light beamscorresponding to the energy attenuation regions are blocked and therebydo not reach the surface to be irradiated 1305. Thus, sheet (square)shaped laser light having a steep energy density distribution in endportions thereof is produced on the surface to be irradiated 1305. Inthis embodiment, the slit is located at a distance of 2 mm from asubstrate. Note that, even when the slit is replaced by the mirror,linear laser light or sheet shaped laser light can be similarlyproduced.

[0085] When such a laser irradiation apparatus is used, uniformannealing can be conducted for the surface to be irradiated. Forexample, when annealing is conducted using a semiconductor film as anobject to be irradiated, it can be crystallized, crystallinity can beimproved to obtain a crystalline semiconductor film having uniformcrystallinity, or an impurity element can be activated.

Embodiment 4

[0086] In this embodiment, the case where laser annealing is conductedfor a large area substrate will be described using FIGS. 6A and 6B.

[0087] First, laser light having high homogeneity of an energy densityis produced in accordance with any one of Embodiments 1 to 3. Then, thelaser light is irradiated to the large area substrate while relativelyshifted (FIG. 6A). At this time, a length of the laser light in alongitudinal direction is shorter than one side of the large areasubstrate, so that entire annealing cannot be conducted by only scanningin one direction. Thus, it is required that scanning is conducted pluraltimes while laser light is moved in at least two directions, therebyforming regions in which the scannings using laser light are adjacent toeach other as shown in FIG. 6B. However, laser light produced by thepresent invention has a steep energy density distribution in endportions, so that attenuation regions are not generated. Therefore,uniform annealing can be also realized for the regions in which thescannings using laser light are adjacent to each other. As a result, thelarge area substrate can be utilized without waste, thereby markedlyimproving throughput.

Embodiment 5

[0088] A method of manufacturing an active matrix substrate is explainedin this embodiment using FIGS. 10A to 13. A substrate on which a CMOScircuit, a driver circuit, and a pixel portion having a TFT pixel and astorage capacitor are formed together is called active matrix substratefor convenience.

[0089] First, a substrate 400 made from glass such as bariumborosilicate glass or aluminum borosilicate glass is used in thisembodiment. Note that substrates such as a quartz substrate, a siliconsubstrate, a metal substrate, and a stainless substrate having aninsulating film formed on the substrate surface may also be used as thesubstrate 400. Further, a plastic substrate having heat resistingproperties capable of enduring the processing temperatures used in thisembodiment may also be used. Because this invention can anneal by usingthe laser light with a very excellent uniformity of the energydistribution, the large area substrate can be used.

[0090] Next, a base film 401 made from an insulating film such as asilicon oxide film, a silicon nitride film, or a silicon oxynitride filmis then formed on the substrate 400 by the known method. A two layerstructure (401 a and 401 b ) is used as the base film 401 in thisembodiment, but a single layer of the above-mentioned insulating filmmay also be used, and a structure in which more than two layers arelaminated may also be used.

[0091] Next, semiconductor layers 402 to 406 are formed on the basefilm. First of all, semiconductor film is formed 25 to 80 nm thick(preferably 30 to 60 nm) by a known method (such as the sputteringmethod, the LPCVD method, the plasma CVD method and the like). Then, thesemiconductor film is crystallized by a laser crystallization method.The laser crystallization method is that the laser light shot from thelaser is applied to the semiconductor film by applying one ofEmbodiments 1 to 4. Of course, not only the laser crystallization methodbut also any other known crystallization method (RTA, the thermalcrystallization method using a furnace annealing, the thermalcrystallization method using metal elements which promotecrystallization) may also be combined. Patterning is performed on theobtained crystalline semiconductor film in a desired form in order toform the semiconductor layers 402 to 406. The semiconductor film may bean amorphous semiconductor film, a micro crystal semiconductor film or acrystalline semiconductor film. Alternatively, the semiconductor filmmay be a compound semiconductor film having an amorphous structure suchas an amorphous silicon germanium film.

[0092] In this embodiment, plasma CVD method is used to form anamorphous silicon film 55 nm thick. After the dehydrogenation isperformed on this amorphous silicon film (at 500° C. for one hour), thelaser light shot from a continuous oscillation YVO₄ laser with output10W is converted into the second higher harmonic wave by a nonlinear,optical element and then the laser light is formed and irradiated fromone of the optical system shown in Embodiment 1 to Embodiment 3. At thistime, about 0.01 to 100 MW/cm² (preferably 0.1 to 10 MW/ cm²) isnecessary for the energy density. It is preferable to assume the pulseoscillation frequency 300 Hz when the excimer laser is used, and toassume the laser energy density to be 100 to 1000 mJ/cm² (typically 200to 700 mJ/cm²). The stage is relatively moved to the laser light at aspeed of about 0.5 to 2000 cm/s, and it irradiates, and then thecrystalline silicon film is formed. The semiconductor layers 402 to 406are formed by performing a patterning process thereon by using aphotolithography method.

[0093] Doping of a very small amount of an impurity element (boron orphosphorus) may be performed after forming the semiconductor films 402to 406 in order to control a TFT threshold.

[0094] A gate insulating film 407 is formed next, covering thesemiconductor films 402 to 406. The gate insulating film 407 is formedby an insulating film containing silicon with a thickness of 40 to 150nm using plasma CVD or sputtering. In this embodiment, a siliconoxynitride film having a film thickness of 110 nm (composition ratios:Si=32%; O=59%; N=7%; H=2%) is formed by plasma CVD. The gate insulatingfilm is of course not limited to a silicon oxynitride film, but otherinsulating films containing silicon may be used in a single layer or ina lamination structure.

[0095] Further, if a silicon oxide film is used, it can be formed byplasma CVD with a mixture of TEOS (Tetraethyl Orthosilicate) and O₂, ata reaction pressure of 40 Pa, with the substrate temperature set from300 to 400° C., and by discharging at a high frequency (13.56 MHz)electric power density of 0.5 to 0.8 W/cm². Good characteristics as agate insulating film can be obtained by subsequently performing thermalannealing, at between 400 and 500° C., of the silicon oxide film thusmanufactured.

[0096] A first conductive film 408 having a film thickness of 20 to 100nm, and a second conductive film 409 having a film thickness of 100 to400 nm are then formed and laminated on the gate insulating film 407.The first conductive film 408, made from a TaN film having a filmthickness of 30 nm, and the second conductive film 409, made from a Wfilm having a film thickness of 370 nm, are formed and laminated in thisembodiment. The TaN film is formed by sputtering, and sputtering of a Tatarget is performed in a nitrogen atmosphere. Further, the W film isformed by sputtering using a W target. In addition, the W film can alsobe formed by thermal CVD using tungsten hexafluoride (WF₆). Whichever isused, it is necessary to be able to make the film become low resistancein order to use it as a gate electrode, and it is preferable that theresistivity of the W film be made less than 20 μΩcm.

[0097] Note that although the first conductive film 408 is TaN and thesecond conductive film 409 is W in this embodiment, there are noparticular limitations placed on the conductive films. The firstconductive film 408 and the second conductive film 409 may also beformed from an element selected from the group consisting of Ta, W, Ti,Mo, Al, Cu, Cr, and Nd, or from an alloy material having one of theseelements as its main constituent, or from a chemical compound of theseelements. Further, a semiconductor film, typically a polycrystallinecrystalline silicon film, into which an impurity element such asphosphorus is doped may also be used, as may an AgPdCu alloy.

[0098] Masks 410 to 415 are formed next from resist using aphotolithography method, and a first etching process is performed inorder to form electrodes and wirings. The first etching processing isperformed in accordance with first and second etching conditions (FIG.10B). An ICP (Inductively Coupled Plasma) etching method is used in thisembodiment as a first etching condition. A gas mixture of CF₄, Cl₂, andO₂ is used as an etching gas, the gas flow rates are set to 25:25:10(sccm), respectively, a plasma is generated by applying a 500 W RF(13.56 MHz) electric power to a coil shape electrode at a pressure of 1Pa, and etching is performed. A 150 W RF (13.56 MHz) electric power isalso applied to the substrate side (sample stage), thereby effectivelyapplying a negative self-bias voltage. The W film is etched under thefirst etching conditions, and the edge portion of the first conductivefilm is made into a tapered shape.

[0099] The etching conditions are changed to a second etching conditionwithout removing the resist masks 410 to 415. A gas mixture of CF₄ andCl₂ is used as an etching gas, the gas flow rates are set to 30:30(sccm), respectively, a plasma is generated by applying a 500 W RF(13.56 MHz) electric power to a coil shape electrode at a pressure of 1Pa, and etching is performed for approximately 30 seconds. A 20 W RF(13.56 MHz) electric power is also applied to the substrate side (samplestage), thereby effectively applying a negative self-bias voltage. The Wfilm and the TaN film are both etched as the same order by the secondetching conditions using the gas mixture of CF₄ and Cl₂. Note that theetching time may be increased in the order of 10 to 20% in order toperform etching such that no residue remains on the gate insulatingfilm.

[0100] Edge portions of the first conductive film and the secondconductive film are made into a tapered shape in accordance with theeffect of a bias voltage, applied to the substrate side, by making theshapes of the resist masks suitable with the above-mentioned firstetching condition. The angle of the tapered portions is from 15 to 45°.First shape conductive films 417 to 422 (first conductive films 417 a to422 a , and second conductive films 417 b to 422 b ) are thus formedfrom the first conductive films and the second conductive films by thefirst etching process. Reference numeral 416 denotes a gate insulatingfilm, and regions not covered by the first shape conductive films 417 to422 become thinner by approximately 20 to 50 nm through etching.

[0101] A second etching process is then performed without removing theresist masks (FIG. 10C). Here, W film is selectively etched by usingCF₄, Cl₂, and O₂ for the etching gas. At this time, the secondconductive layers 428 b to 433 b are formed by the second etchingprocess. On the other hand, the first conductive layers 417 a to 422 aare hardly etched and the second shape conductive layers 428 to 433 areformed.

[0102] A first doping process is then performed without removing theresist masks and the semiconductor layer is added to the impurityelement which imparts n-type at a low concentration. The doping processmay be performed by ion doping or ion implantation. Ion doping isperformed with process conditions in which the dosage is set from 1×10¹³to 5×10¹⁴/cm², and the acceleration voltage is set between 40 and 80keV. Doping is performed in this embodiment with the dosage set to1.5×10¹³/cm², and the acceleration voltage set to 60 keV. An elementbelonging to the group 15, typically phosphorus (P) or arsenic (As) isused as an impurity element which imparts n-type. Phosphorus (P) is usedhere. In this case the conductive layers 428 to 433 act as masks withrespect to the impurity element which imparts n-type conductivity, andthe impurity regions 423 to 427 are formed in a self-aligning manner.The impurity element which imparts n-type is added to the impurityregions 423 to 427 at a concentration in a range of 1×10¹⁸ to1×10²⁰/cm³.

[0103] Next, after removing the resist masks, new resist masks 434 a to434 c are formed, and the second doping process is performed in higheracceleration voltage than the first doping process. Ion doping isperformed with process conditions in which the dosage is set from 1×10¹³to 1×10¹⁵/cm², and the acceleration voltage is set between 60 and 120keV. The doping process is performed by using the second conductivelayers 428 b to 432 b as masks and the semiconductor layer under thetaper part of the first conductive layer is added to the impurityelement. Continuously the acceleration voltage is lowered than thesecond doping process, the third doping process is done, and the stateof FIG. 11A is obtained. Ion doping is performed with process conditionsin which the dosage is set from 1×10¹⁵ to 1×10¹⁷/cm², and theacceleration voltage is set between 50 to 100 keV. Low concentrationimpurity regions 436, 442 and 448 which come in succession as for thefirst conductive layer are added to the impurity element, which impartsn-type within the range of the density of 1×10¹⁸ to 5×10¹⁹/cm² by thesecond doping process and the third doping process and highconcentration impurity regions 435, 441, 444 and 447 are added to theimpurity element, which imparts n-type within the range of the densityof 1×10¹⁹ to 5×10²¹/cm².

[0104] Of course, the second doping process and the third doping processcan be one-time doping processes by making it to a suitable accelerationvoltage and it is also possible to form the low concentration impurityregion and high concentration impurity region.

[0105] Next, after removing the resist masks, new masks 450 a to 450 cmade from resist are formed and the fourth doping process is performed.Impurity regions 453, 454, 459 and 460, to which an impurity elementwhich imparts a conductivity type opposite to that of the above singleconductivity type is added, are formed in accordance with the fourthdoping process in the semiconductor films which become active layers ofthe p-channel TFTs. The second conductive layers 428 a to 432 a are usedas masks with respect to the impurity element, and an impurity elementwhich imparts p-type conductivity is added to form the impurity regionsin a self-aligning manner. The impurity regions 453, 454, 459 and 460are formed by ion doping using diborane (B₂H₆) in this embodiment (seeFIG. 11B). The semiconductor layers for forming the n-channel TFT arecovered with the resist masks 450 a to 450 c when the fourth dopingprocess is performed. Phosphorus is added at different concentrationsinto the impurity regions 439, 447 and 448 by the first doping processand by the third doping process. However, by performing doping such thatthe concentration of the impurity element which imparts p-typeconductivity becomes from 1×10¹⁹ to 5×10²¹ atoms/cm³ in each of theregions, no problems develop in making the regions function as sourceregions and drain regions of the p-channel TFT.

[0106] The impurity regions are thus formed in the respectivesemiconductor layers by the steps up through this point.

[0107] A first interlayer insulating film 461 is formed next afterremoving the resist masks 450 a to 450 c. This first interlayerinsulating film 461 is formed from an insulating film containingsilicon, having a thickness of 100 to 200 nm, by using plasma CVD orsputtering. A silicon oxynitride film having a thickness of 150 nm isformed by plasma CVD in this embodiment. The first interlayer insulatingfilm 461 is of course not limited to a silicon oxynitride film, andother insulating films containing silicon may also be used, as a singlelayer or a lamination structure.

[0108] Recovery of the crystallinity of the semiconductor layer and anactivation of the impurity elements added to the respectivesemiconductor layers are performed by irradiating the laser light, asshown in FIG. 11C. At this time, energy density of the laser light isnecessary about 0.01 to 100 MW/cm² (Preferably 0.01 to 10 MW/cm²), andmoves the substrate to the laser light relatively at the speed of 0.5 to2000 MW/cm². Besides, laser annealing method, thermal annealing methodor rapid thermal annealing method (RTA method) and the like can beapplied.

[0109] Further, a heat treatment process may also be performed beforethe formation of a first interlayer insulating film. However, if thewiring material used is weak with respect to heat, then it is preferableto perform a heat treatment process after forming an interlayerinsulating film (an insulating film having silicon as its mainconstituent, for example a silicon nitride film) in order to protect thewirings and the like, as in this embodiment.

[0110] Then, a heat treatment process for hydrogenation can also beperformed (for 1 to 12 hours at 300 to 550° C.). This process is one ofterminating dangling bonds in the semiconductor layers by hydrogencontained within the first interlayer insulating film 461. Thesemiconductor layers can be hydrogenated whether or not the firstinterlayer insulating film exists. Plasma hydrogenation (using hydrogenexcited by a plasma), and a heat treatment process for 1 to 12 hours ata temperature of 300 to 450° C. in an atmosphere containing hydrogen offrom 3 to 100% may also be performed as other means of hydrogenation.

[0111] A second interlayer insulating film 462 made from an inorganicinsulating film material or from an organic insulating film material isformed next on the first interlayer insulating film 461. An acrylicresin film having a film thickness of 1.6 μm is formed in thisembodiment, and the material used may have a viscosity from 10 to 1000cp, preferably between 40 to 200 cp. A material in which unevenness isformed on its surface is used.

[0112] In order to prevent specular reflection, the surface of a pixelelectrode is made uneven by forming a second interlayer insulating filmwhich forms an uneven surface in this embodiment. Further, the pixelelectrode surface can be made to be uneven and have light scatteringcharacteristics, and therefore a convex portion may also be formed in aregion below the pixel electrode. The formation of the convex portioncan be performed by the same photomask as that for forming the TFTs, andtherefore it can be formed without increasing the number of processsteps. Note that the convex portion may also be formed appropriately onthe substrate of the pixel portion region except the wirings and TFTs.In this way, unevenness is formed in the surface of the pixel electrodealong the unevenness formed in the surface of the insulating film whichcovers the convex portion.

[0113] A film having a level surface may also be used as the secondinterlayer insulating film 462. In this case, it is preferable that thesurface be made uneven by an added process such as a known sandblastingprocess or etching process to prevent specular reflection, and therebyincreasing whiteness by scattering reflected light.

[0114] Wirings 463 to 467 for electrically connecting respectiveimpurity regions are then formed in a driver circuit 506. Note that alamination film of a Ti film having a thickness of 50 nm and an alloyfilm (an alloy of Al and Ti) having a thickness of 500 nm is patternedin order to form the wirings. Of course, two layer structure is notlimited, and the single-layer structure or the lamination structure morethan three layers are also acceptable. Further, Al and Ti are notlimited to the wiring material. For example, Al and Cu are formed on TaNfilm, and the lamination film forming the Ti film is formed by thepatterning and form wiring (FIG. 12).

[0115] Furthermore, a pixel electrode 470, a gate wiring 469, and aconnection electrode 468 are formed in a pixel portion 507. Anelectrical connection is formed with the pixel TFT and the source wiring(lamination of 433 a and 433 b) by the connection electrode 468.Further, the gate wiring 469 forms an electrical connection with thegate electrode of the pixel TFT. The pixel electrode 470 forms anelectrical connection with the drain region 471 of the pixel TFT, and inaddition, forms an electrical connection with the semiconductor layer459 which functions as one electrode forming a storage capacitor. It ispreferable to use a material having superior reflectivity, such as afilm having Al or Ag as its main constituent, or a lamination film ofsuch films, as the pixel electrode 470.

[0116] A CMOS circuit composed of a n-channel TFT 501 and a p-channelTFT 502, a driver circuit 506 having an n-channel TFT 503, and the pixelportion 507 having a pixel TFT 504 and a storage capacitor 505 can thusbe formed on the same substrate. The active matrix substrate is thuscompleted.

[0117] The n-channel TFT 501 of the driver circuit 506 has: a channelforming region 437; the low concentration impurity region 436 (GOLDregion) which overlaps with the first conductive layer 428 a thatstructures a portion of the gate electrode; and the high concentrationimpurity region 452 which functions as a source region or a drainregion. The p-channel TFT 502, which forms the CMOS circuit with then-channel TFT 501 and the electrode 466 by an electrical connection has:a channel forming region 440; the low concentration impurity region 454(GOLD region) which overlaps with the first conductive layer 429 a thatstructures a portion of the gate electrode; and the high concentrationimpurity region 453 which functions as a source region or a drainregion. Further, the n-channel TFT 503 has: a channel forming region443; the low concentration impurity region 442 (GOLD region) whichoverlaps with the first conductive layer 430 a that structures a portionof the gate electrode; and the high concentration impurity region 456which functions as a source region or a drain region.

[0118] The pixel TFT 504 of the pixel portion has: a channel formingregion 446; the low concentration impurity region 445 (LDD region)formed on the outside of the gate electrode; and the high concentrationimpurity region 458 which functions as a source region or a drainregion. Further, an impurity element which imparts n-type and animpurity element which imparts p-type are added to the semiconductorlayer which functions as one electrode of the storage capacitor. Thestorage capacitor 505 comprises an electrode (lamination of 432 a and432 b ) and the semiconductor layer, with the insulating film 416functioning as a dielectric.

[0119] Edge portions of the pixel electrodes are disposed so as tooverlap with source wirings such that gaps between the pixel electrodesshield the light, without using a black matrix, with the pixel structureof this embodiment.

[0120] An upper surface diagram of the pixel portion of the activematrix substrate manufactured by this embodiment is shown in FIG. 13.Note that the same reference symbols are used for portions correspondingto those in FIGS. 10A to 13. A chain line A-A′ in FIG. 12 corresponds toa cross sectional diagram cut along a chain line A-A′ within FIG. 13.Further, a chain line B-B′ in FIG. 12 corresponds to a cross sectionaldiagram cut along a chain line B-B′ within FIG. 13.

Embodiment 6

[0121] A process of manufacturing a reflection type liquid crystaldisplay device from the active matrix substrate manufactured inEmbodiment 5 is explained below in this embodiment. FIG. 14 is used inthe explanation.

[0122] An active matrix substrate in the state of FIG. 12 is firstobtained in accordance with Embodiment 5, an alignment film 567 is thenformed on at least the pixel electrode 470 on the active matrixsubstrate of FIG. 12, and a rubbing process is performed. Note that,before forming the alignment film 567 in this embodiment, columnarspacer 572 is formed in desired positions by patterning an organic resinfilm, such as an acrylic resin film and the like, in order to maintain agap between substrates. Further, spherical shape spacers may also bedistributed over the entire surface of the substrate as a substitute forthe columnar spacers.

[0123] An opposing substrate 569 is prepared next. Coloring layers 570and 571, and a leveling film 573 are then formed on the opposingsubstrate 569. The red coloring layer 570 and a blue coloring layer 571are overlapped to form a light shielding portion. Furthermore, the lightshielding portion may also be formed by overlapping a portion of the redcoloring layer with a green coloring layer.

[0124] The substrate shown in Embodiment 5 is used in this embodiment.Therefore, with the top surface diagram of the pixel portion ofEmbodiment 5 shown in FIG. 13, it is necessary that, at least, the gapbetween the gate wiring 469 and the pixel electrode 470, the gap betweenthe gate wiring 469 and the connection electrode 468, and the gapbetween the connection electrode 468 and the pixel electrode 470 beshielded from light. Each of the coloring layers are arranged such thatthe light shielding portions made from the lamination of the coloringlayers are formed in positions that must be shielded from light, andthen are joined to the opposing substrate.

[0125] It is thus made possible to reduce the number of process steps byperforming light shielding of the respective gaps between the pixels byusing the light shielding portions, composed of the laminations of thecoloring layers, without forming a light shielding layer such as a blackmask and the like.

[0126] An opposing electrode 576 made from a transparent conductive filmis formed on the leveling film 573 over at least the pixel portion, analignment film 574 is formed over the entire surface of the opposingsubstrate, and a rubbing process is performed.

[0127] The active matrix substrate on which the pixel portion and thedriver circuit are formed, and the opposing substrate are then joined bya sealing material 568. A filler is mixed in the sealing material 568,and the two substrates are joined while maintaining a uniform gap inaccordance with the filler and the columnar spacers. A liquid crystalmaterial 575 is then injected between both substrates, and thesubstrates are completely sealed by using a sealant (not shown in thefigure). A known liquid crystal material may be used for the liquidcrystal material 575. The reflection type liquid crystal display deviceshown in FIG. 14 is thus completed. The active matrix substrate or theopposing substrate is then cut into a desired shape if necessary. Inaddition, a polarizing plate (not shown in the figure) is attached toonly the opposing substrate. An FPC is then attached using a knowntechnique.

[0128] Liquid crystal display device made by above-mentioned method hasTFT by using the semiconductor film thoroughly annealed because thelaser light with a very excellent uniformity of the energy distributionis irradiated. It is possible to become the one with enough operationcharacteristic and reliability of the above-mentioned liquid crystaldisplay device. Such a liquid crystal display can be used as a displayportion in various types of electronic equipment.

[0129] Note that it is possible to freely combine this embodiment withEmbodiments 1 to 5.

Embodiment 7

[0130] In this embodiment, an example of manufacturing the lightemitting device by using a manufacturing method of TFT that is used forforming an active matrix substrate. In this specification, thelight-emitting device is the general term for the display panel encloseda light emitting element formed on the substrate between the aforesaidsubstrate and the cover member, and to the aforesaid display moduleequipped TFT with the aforesaid display panel. Incidentally, the lightemitting element has a layer including a compound in which anelectroluminescence can be obtained by applying an electric field (aluminous body), an anode, and a cathode. Meanwhile, theelectroluminescence in compound includes the light emission (fluorescentlight) upon returning from the singlet-excited state to the ground stateand the light emission (phosphorescent light) upon returning from thetriplet-excited state to the ground state, including any or both oflight emission.

[0131] In this specification, all layers formed between the anode andthe cathode in the luminescence element are defined as the luminousbody. The luminescence layer, the hole injection layer, the electronicinjection layer, the hole transportation layer, and the electronictransportation layer, etc. are concretely included in the luminous body.The luminescence element basically has the structure that the anodelayer, the luminescence layer, and the cathode layer are sequentiallylaminated. The structures laminated in order of the anode layer, thehole injection layer, the luminescence layer, the cathode layer, theanode layer, the hole injection layer, the luminescence layer, theelectronic transportation layer, and the cathode layer, etc. in additionto this structure are occasionally possessed.

[0132]FIG. 15 is a sectional view of a light-emitting device of thisembodiment. In FIG. 15, the switching TFT 603 provided on the substrate700 is formed by using the n-channel TFT 503 of FIG. 15. Consequently,concerning the explanation of the structure, it is satisfactory to referthe explanation on the n-channel TFT 503.

[0133] Incidentally, although this example is of a double gate structureformed with two channel regions, it is possible to use a single gatestructure formed with one channel region or a triple gate structureformed with three.

[0134] The driver circuit provided on the substrate 700 is formed byusing the CMOS circuit of FIG. 12. Consequently, concerning theexplanation of the structure, it is satisfactory to refer theexplanation on the n-channel TFT 501 and p-channel TFT 502.Incidentally, although this embodiment is of a single gate structure, itis possible to use a double gate structure or a triple gate structure.

[0135] Meanwhile, the wirings 701, 703 serve as source wirings of theCMOS circuit while the wiring 702 as a drain wiring. Meanwhile, a wiring704 serves as a wiring to electrically connect between the source wiring708 and the source region of the switching TFT while the wiring 705serves as a wiring to electrically connect between the drain wiring andthe drain region of the switching TFT.

[0136] Incidentally, a current control TFT 604 is formed by using thep-channel TFT 502 of FIG. 12. Consequently, concerning the explanationof the structure, it is satisfactory to refer to the explanation on thep-channel TFT 502. Incidentally, although this embodiment is of a singlegate structure, it is possible to use a double gate structure or atriple gate structure.

[0137] Meanwhile, the wiring 706 is a source wiring of the currentcontrol TFT 604 (corresponding to a current supply line) while thewiring 707 is an electrode to be electrically connected to the pixelelectrode 711 by being overlaid a pixel electrode 711 of the currentcontrol TFT.

[0138] Meanwhile, 711 is a pixel electrode (anode of a light-emittingelement) formed by a transparent conductive film. As the transparentconductive film can be used a compound of indium oxide and tin oxide, acompound of indium oxide and zinc oxide, zinc oxide, tin oxide or indiumoxide, or otherwise may be used a transparent conductive film as aboveadded with gallium. The pixel electrode 711 is formed on a planarinterlayer insulating film 710 prior to forming the wirings. In thisembodiment, it is very important to planarize the step due to the TFT byusing a resin planarizing film 710. A light-emitting layer to be formedlater, because being extremely small in thickness, possibly causes poorlight emission due to the presence of a step. Accordingly, it is desiredto provide planarization prior to forming a pixel electrode so that alight-emitting layer can be formed as planar as possible.

[0139] After forming the wirings 701 to 707, a bank 712 is formed asshown in FIG. 15. The bank 712 may be formed by patterning an insulatingfilm or organic resin film containing silicon having 100 to 400 nm.

[0140] Incidentally, because the bank 712 is an insulating film, cautionmust be paid to element electrostatic breakdown during deposition. Inthis embodiment added is a carbon particle or metal particle to aninsulating film as a material for the bank 712, thereby reducingresistivity and suppressing occurrence of static electricity. In such acase, the addition amount of carbon or metal particle may be adjusted toprovide a resistivity of 1×10⁶ to 1×10¹² Ωm (preferably 1×10⁸ to 1×10¹⁰Ωm).

[0141] A luminous body 713 is formed on the. pixel electrode 711.Incidentally, although FIG. 15 shows only one pixel, this embodimentseparately forms the luminous body correspondingly to the respectivecolors of R (red), G (green) and B (blue). Meanwhile, in this embodimentis formed a low molecular weight organic electroluminescent material bythe deposition process. Specifically, this is a lamination structurehaving a copper phthalocyanine (CuPc) film provided in a thickness of 20nm as a hole injecting layer and a tris-8-qyuinolinolato aluminumcomplex (Alq₃) film provided thereon in a thickness of 70 nm as alight-emitting layer. The color of emission light can be controlled byadding a fluorescent pigment, such as quinacridone, perylene or DCM1, toAlq₃.

[0142] However, the foregoing example is an example of organicelectroluminescent material to be used for a phosphor and notnecessarily limited to this. It is satisfactory to form a luminous body(layer for light emission and carrier movement therefore) by freelycombining a light-emitting layer, a charge transporting layer and anelectron injecting layer. For example, although in this embodiment wasshown the example in which a low molecular weight organicelectroluminescent material is used for a light-emitting layer, it ispossible to use an intermediate organic electroluminescent material anda high molecular weight organic electroluminescent material. In thisspecification, an intermediate molecular weight organic material can bedefined that an aggregate of an organic electroluminescent materialwhich does not have subliming property or dissolving property(preferably, an aggregate which has molecularity of 20 or less), or anorganic electroluminescent material (referred to as intermediatemolecular weight organic electroluminescent material) which has amolecular chain length of 10 μm or less (preferably 50 nm or less). Foran example of using the high molecular weight organic electroluminescentmaterial, a polythiophene (PEDOT) film of 20 nm is formed by the spincoating method as a hole injection layer and the lamination structureinstalling paraphenylenvinylene (PPV) of about 100 nm on it as a lightemitting layer may be good. The luminescence wave length can be selectedfrom red to blue by using the π conjugated high molecular of PPV.Meanwhile, it is possible to use an inorganic material such as siliconcarbide for an electron transporting layer or charge injecting layer.These organic electroluminescent materials or inorganic materials can bea known material.

[0143] Next, a cathode 714 of a conductive film is provided on theluminous body 713. In this embodiment, as the conductive film is used analloy film of aluminum and lithium. Of course, a known MgAg film (alloyfilm of magnesium and silver) may be used. As the cathode material maybe used a conductive film of an element belonging to the periodic-tablegroup 1 or 2, or a conductive film added with such an element.

[0144] A light-emitting element 715 is completed at a time having formedup to the cathode 714. Incidentally, the light-emitting element 715herein refers to a diode formed with a pixel electrode (anode) 711, alight-emitting layer 713 and a cathode 714.

[0145] It is effective to provide a passivation film 716 in such amanner to completely cover the light-emitting element 715. Thepassivation film 716 is formed by an insulating film including a carbonfilm, a silicon nitride film or a silicon nitride oxide film, and usedis an insulating film in a single layer or a combined lamination.

[0146] In such a case, it is preferred to use a film favorable incoverage as a passivation film. It is effective to use a carbon film,particularly DLC (diamond-like carbon) film. The DLC film, capable ofbeing deposited in a temperature range not more than 100° C. from roomtemperature, can be easily deposited over the light-emitting layer 713low in heat resistance. Meanwhile, the DLC film, having a high blockingeffect to oxygen, can suppress the light-emitting layer 713 fromoxidizing. Consequently, the problem of oxidation can be prevented inthe light-emitting layer 713 during the following seal process.

[0147] Furthermore, a seal member 717 is provided on the passivationfilm 716 to bond a cover member 718. For the seal member 717 used may bean ultraviolet-ray-set resin. It is effective to provide therein asubstance having a hygroscopic effect or an antioxidant effect.Meanwhile, in this embodiment, for the cover member 718 used is a glasssubstrate, quartz substrate or plastic substrate (including a plasticfilm) having carbon films (preferably diamond-like carbon films) formedon the both surfaces thereof.

[0148] Thus, completed is a light-emitting device having a structure asshown in FIG. 15. Incidentally, it is effective to continuously carryout, without releasing to the air, the process to form a passivationfilm 716 after forming a bank 712 by using a deposition apparatus of amulti-chamber scheme (or in-line scheme). In addition, with furtherdevelopment it is possible to continuously carry out the process up tobonding a cover member 718, without release to the air.

[0149] In this manner, n-channel TFT 601, p-channel TFT 602, a switchingTFT (n-channel TFT) 603 and a current control TFT (n-channel TFT) 604are formed on the substrate 700.

[0150] Furthermore, as explained using FIG. 15, by providing an impurityregion overlapped with the gate electrode through an insulating film, itis possible to form an n-channel TFT resistive to the deteriorationresulting from hot-carrier effect. Consequently, a reliablelight-emitting device can be realized.

[0151] Meanwhile, this embodiment shows only the configuration of thepixel portion and driver circuit. However, according to themanufacturing process in this embodiment, besides these, it is possibleto form on the same insulating member such logic circuits as a signaldivision circuit, a D/A converter, an operation amplifier, aγ-correction circuit or the like. Furthermore, a memory ormicroprocessor can be formed.

[0152] The light emitting device formed by the above-mentioned methodhas TFT formed by using the semiconductor film thoroughly annealed,because it is irradiated the laser light that has a very excellentuniform energy distribution. Therefore, the above-mentionedlight-emitting device is obtained enough operation characteristic andreliability. Such a light emitting device can be used as display partsof various electronic equipments.

[0153] This embodiment can be freely combined with Embodiments 1 to 5.

Embodiment 8

[0154] Various semiconductor devices (active matrix type liquid crystaldisplay device, active matrix type light-emitting device or activematrix type EC display device) can be formed by applying the presentinvention. Specifically, the present invention can be embodied inelectronic equipment of any type in which such an electro-optical deviceis incorporated in a display portion.

[0155] Such electronic equipment is a video camera, a digital camera, aprojector, a head-mounted display (goggle type display), a carnavigation system, a car stereo, a personal computer, or a mobileinformation terminal (such as a mobile computer, a mobile telephone oran electronic book). FIGS. 16, 17 and 18 show one of its examples.

[0156]FIG. 16A shows a personal computer which includes a main body3001, an image input portion 3002, a display portion 3003, a keyboard3004 and the like. The invention can be applied to the display portion3003.

[0157]FIG. 16B shows a video camera which includes a main body 3101, adisplay portion 3102, a sound input portion 3103, operating switches3104, a battery 3105, an image receiving portion 3106 and the like. Theinvention can be applied to the display portion 3102.

[0158]FIG. 16C shows a mobile computer which includes a main body 3201,a camera portion 3202, an image receiving portion 3203, an operatingswitch 3204, a display portion 3205 and the like. The invention can beapplied to the display portion 3205.

[0159]FIG. 16D shows a goggle type display which includes a main body3301, a display portion 3302, arm portions 3303 and the like. Theinvention can be applied to the display portion 3302.

[0160]FIG. 16E shows a player using a recording medium on which aprogram is recorded (hereinafter referred to as the recording medium),and the player includes a main body 3401, a display portion 3402,speaker portions 3403, a recording medium 3404, operating switches 3405and the like. This player uses a DVD (Digital Versatile Disc), a CD andthe like as the recording medium, and enables a user to enjoy music,movies, games and the Internet. The invention can be applied to thedisplay portion 3402.

[0161]FIG. 16F shows a digital camera which includes a body 3501, adisplay portion 3502, an eyepiece portion 3503, operating switches 3504,an image receiving portion (not shown) and the like. The invention canbe applied to the display portion 3502.

[0162]FIG. 17A shows a front type projector which includes a projectiondevice 3601, a screen 3602 and the like. The invention can be applied toa liquid crystal display device 3808 which constitutes a part of theprojection device 3601 as well as other driver circuits.

[0163]FIG. 17B shows a rear type projector which includes a main body3701, a projection device 3702, a mirror 3703, a screen 3704 and thelike. The invention can be applied to the liquid crystal display device3808 which constitutes a part of the projection device 3702 as well asother driver circuits.

[0164]FIG. 17C shows one example of the structure of each of theprojection devices 3601 and 3702 which are respectively shown in FIGS.17A and 17B. Each of the projection devices 3601 and 3702 is made of alight source optical system 3801, mirrors 3802 and 3804 to 3806, adichroic mirror 3803, a prism 3807, a liquid crystal display device3808, a phase difference plate 3809 and a projection optical system3810. The projection optical system 3810 is made of an optical systemincluding a projection lens. Embodiment 8 is an example of a three-platetype, but it is not limited to this example and may also be of asingle-plate type. In addition, those who embody the invention mayappropriately dispose an optical system such as an optical lens, a filmhaving a polarization function, a film for adjusting phase difference oran IR film in the path indicated by arrows in FIG. 17C.

[0165]FIG. 17D is a view showing one example of the structure of thelight source optical system 3801 shown in FIG. 17C. In Embodiment 8, thelight source optical system 3801 is made of a reflector 3811, a lightsource 3812, lens arrays 3813 and 3814, a polarizing conversion element3815 and a condenser lens 3816. Incidentally, the light source opticalsystem shown in FIG. 17D is one example, and the invention is notparticularly limited to the shown construction. For example, those whoseembody the invention may appropriately dispose an optical system such asan optical lens, a film having a polarization function, a film foradjusting phase difference or an IR film.

[0166] The projector shown in FIGS. 17A to 17D is of the type using atransparent type of electro-optical device, but there is not shown anexample in which the invention is applied to a reflection type ofelectro-optical device and a light-emitting device.

[0167]FIG. 18A shows a portable telephone which includes a main body3901, a sound output portion 3902, a sound input portion 3903, a displayportion 3904, operating switches 3905, an antenna 3906 and the like. Theinvention can be applied to the display portion 3904.

[0168]FIG. 18B shows a portable book (electronic book) which includes amain body 4001, display portions 4002 and 4003, a storage medium 4004,operating switches 4005, an antenna 4006 and the like. The invention canbe applied to the display portions 4002 and 4003.

[0169]FIG. 18C shows a display which includes a main body 4101, asupport base 4102, a display portion 4103 and the like. The inventioncan be applied to the display portion 4103. The invention isparticularly advantageous to a large-screen display, and is advantageousto a display having a diagonal size of 10 inches or more (particularly,30 inches or more).

[0170] As is apparent from the foregoing description, the range ofapplications of the invention is extremely wide, and the invention canbe applied to any category of electronic apparatus. Electronic apparatusaccording to the invention can be realized by using a construction madeof a combination of arbitrary ones of Embodiments 1 to 6 and 7.

[0171] When the constitution of the present invention is employed, thefollowing fundamental significance can be obtained.

[0172] (a) Laser light having a very superior energy densitydistribution can be produced on a surface to be irradiated or a surfaceof its vicinity.

[0173] (b) Uniform annealing can be conducted for an object to beirradiated. This is particularly effective in the case of a large areasubstrate.

[0174] (c) Throughput can be improved.

[0175] (d) When the above advantages are satisfied, improvements of anoperating characteristic and reliability of a semiconductor devicerepresented by an active matrix liquid crystal display device can berealized. Further, a reduction in a manufacturing cost of asemiconductor device can be realized.

What is claimed is:
 1. A method of manufacturing a semiconductor devicecomprising: forming a semiconductor film over a substrate; emitting alaser light from a laser; converting a first energy density distributionof the laser light into a second energy density distribution at asurface to be irradiated; removing an energy attenuation region of thelaser light having the second energy density distribution by a meansprovided within 1 cm from the surface to be irradiated; and irradiatingthe semiconductor film with the laser light after the removing step. 2.A method of manufacturing a semiconductor device according to claim 1,wherein the irradiating step is conducted by relatively shifting thesurface to be irradiated.
 3. A method of manufacturing a semiconductordevice according to claim 1, wherein the laser comprises at least oneselected from the group consisting of a continuous oscillation solidlaser, a continuous oscillation gas laser, a pulse oscillation solidlaser, and a pulse oscillation gas laser.
 4. A method of manufacturing asemiconductor device according to claim 1, wherein the laser comprisesat least one selected from the group consisting of a YAG laser, a YVO₄laser, a YLF laser, a YAIO₃ laser, a glass laser, a ruby laser, analexandrite laser, and a Ti: sapphire laser.
 5. A method ofmanufacturing a semiconductor device according to claim 1, wherein thelaser is one selected from the group consisting of an excimer laser, anAr laser, and a Kr laser.
 6. A method of manufacturing a semiconductordevice according to claim 1, wherein the semiconductor device is atleast one selected from the group consisting of a personal computer, avideo camera, a mobile computer, a goggle type display, a player using arecording medium, a digital camera, a projector, a portable telephone,and a portable electronic book.
 7. A method of manufacturing asemiconductor device comprising: forming a semiconductor film over asubstrate; emitting a laser light from a laser; converting a firstenergy density distribution of the laser light into a second energydensity distribution at a surface to be irradiated; removing an endportion of the laser light having the second energy density distributionby a means provided within 1 cm from the surface to be irradiated; andirradiating the semiconductor film with the laser light after theremoving step
 8. A method of manufacturing a semiconductor deviceaccording to claim 7, wherein the irradiating step is conducted byrelatively shifting the surface to be irradiated.
 9. A method ofmanufacturing a semiconductor device according to claim 7, wherein thelaser comprises at least one selected from the group consisting of acontinuous oscillation solid laser, a continuous oscillation gas laser,a pulse oscillation solid laser, and a pulse oscillation gas laser. 10.A method of manufacturing a semiconductor device according to claim 7,wherein the laser comprises at least one selected from the groupconsisting of a YAG laser, a YVO₄ laser, a YLF laser, a YAlO₃ laser, aglass laser, a ruby laser, an alexandrite laser, and a Ti: sapphirelaser.
 11. A method of manufacturing a semiconductor device according toclaim 7, wherein the laser is one selected from the group consisting ofan excimer laser, an Ar laser, and a Kr laser.
 12. A method ofmanufacturing a semiconductor device according to claim 7, wherein thesemiconductor device is at least one selected from the group consistingof a personal computer, a video camera, a mobile computer, a goggle typedisplay, a player using a recording medium, a digital camera, aprojector, a portable telephone, and a portable electronic book.
 13. Amethod of manufacturing a semiconductor device comprising: forming asemiconductor film over a substrate; emitting a laser light from alaser; converting a first energy density distribution of the laser lightinto a second energy density distribution at a surface to be irradiated;removing an end portion of the laser light having the second energydensity distribution by a slit provided within 1 cm from the surface tobe irradiated; and irradiating the semiconductor film with the laserlight after the removing step.
 14. A method of manufacturing asemiconductor device according to claim 13, wherein the irradiating stepis conducted by relatively shifting the surface to be irradiated.
 15. Amethod of manufacturing a semiconductor device according to claim 13,wherein the laser comprises at least one selected from the groupconsisting of a continuous oscillation solid laser, a continuousoscillation gas laser, a pulse oscillation solid laser, and a pulseoscillation gas laser.
 16. A method of manufacturing a semiconductordevice according to claim 13, wherein the laser comprises at least oneselected from the group consisting of a YAG laser, a YVO₄ laser, a YLFlaser, a YAIO₃ laser, a glass laser, a ruby laser, an alexandrite laser,and a Ti: sapphire laser.
 17. A method of manufacturing a semiconductordevice according to claim 13, wherein the laser is one selected from thegroup consisting of an excimer laser, an Ar laser, and a Kr laser.
 18. Amethod of manufacturing a semiconductor device according to claim 13,wherein the semiconductor device is at least one selected from the groupconsisting of a personal computer, a video camera, a mobile computer, agoggle type display, a player using a recording medium, a digitalcamera, a projector, a portable telephone, and a portable electronicbook.
 19. A method of manufacturing a semiconductor device comprising:forming a semiconductor film over a substrate; emitting a laser lightfrom a laser; changing a sectional shape of the laser light into a shapeelongated in one direction at a surface to be irradiated; removing anenergy attenuation region of the laser light by a means provided within1 cm from the surface to be irradiated; and irradiating thesemiconductor film with the laser light after the removing step.
 20. Amethod of manufacturing a semiconductor device according to claim 19,wherein the irradiating step is conducted by relatively shifting thesurface to be irradiated.
 21. A method of manufacturing a semiconductordevice according to claim 19, wherein the laser comprises at least oneselected from the group consisting of a continuous oscillation solidlaser, a continuous oscillation gas laser, a pulse oscillation solidlaser, and a pulse oscillation gas laser.
 22. A method of manufacturinga semiconductor device according to claim 19, wherein the lasercomprises at least one selected from the group consisting of a YAGlaser, a YVO₄ laser, a YLF laser, a YAlO₃ laser, a glass laser, a rubylaser, an alexandrite laser, and a Ti: sapphire laser.
 23. A method ofmanufacturing a semiconductor device according to claim 19, wherein thelaser is one selected from the group consisting of an excimer laser, anAr laser, and a Kr laser.
 24. A method of manufacturing a semiconductordevice according to claim 19, wherein the semiconductor device is atleast one selected from the group consisting of a personal computer, avideo camera, a mobile computer, a goggle type display, a player using arecording medium, a digital camera, a projector, a portable telephone,and a portable electronic book.
 25. A method of manufacturing asemiconductor device comprising: forming a semiconductor film over asubstrate; emitting a laser light from a laser; changing a sectionalshape of the laser light into a shape elongated in one direction at asurface to be irradiated; removing an end portion of the laser light bya means provided within 1 cm from the surface to be irradiated; andirradiating the semiconductor film with the laser light after theremoving step.
 26. A method of manufacturing a semiconductor deviceaccording to claim 25, wherein the irradiating step is conducted byrelatively shifting the surface to be irradiated.
 27. A method ofmanufacturing a semiconductor device according to claim 25, wherein thelaser comprises at least one selected from the group consisting of acontinuous oscillation solid laser, a continuous oscillation gas laser,a pulse oscillation solid laser, and a pulse oscillation gas laser. 28.A method of manufacturing a semiconductor device according to claim 25,wherein the laser comprises at least one selected from the groupconsisting of a YAG laser, a YVO₄ laser, a YLF laser, a YAIO₃ laser, aglass laser, a ruby laser, an alexandrite laser, and a Ti: sapphirelaser.
 29. A method of manufacturing a semiconductor device according toclaim 25, wherein the laser is one selected from the group consisting ofan excimer laser, an Ar laser, and a Kr laser.
 30. A method ofmanufacturing a semiconductor device according to claim 25, wherein thesemiconductor device is at least one selected from the group consistingof a personal computer, a video camera, a mobile computer, a goggle typedisplay, a player using a recording medium, a digital camera, aprojector, a portable telephone, and a portable electronic book.
 31. Amethod of manufacturing a semiconductor device comprising: forming asemiconductor film over a substrate; emitting a laser light from alaser; changing a sectional shape of the laser light into a shapeelongated in one direction at a surface to be irradiated; removing anend portion of the laser light by a slit provided within 1 cm from thesurface to be irradiated; and irradiating the semiconductor film withthe laser light after the removing step.
 32. A method of manufacturing asemiconductor device according to claim 31, wherein the irradiating stepis conducted by relatively shifting the surface to be irradiated.
 33. Amethod of manufacturing a semiconductor device according to claim 31,wherein the laser comprises at least one selected from the groupconsisting of a continuous oscillation solid laser, a continuousoscillation gas laser, a pulse oscillation solid laser, and a pulseoscillation gas laser.
 34. A method of manufacturing a semiconductordevice according to claim 31, wherein the laser comprises at least oneselected from the group consisting of a YAG laser, a YVO₄ laser, a YLFlaser, a YAIO₃ laser, a glass laser, a ruby laser, an alexandrite laser,and a Ti: sapphire laser.
 35. A method of manufacturing a semiconductordevice according to claim 31, wherein the laser is one selected from thegroup consisting of an excimer laser, an Ar laser, and a Kr laser.
 36. Amethod of manufacturing a semiconductor device according to claim 31,wherein the semiconductor device is at least one selected from the groupconsisting of a personal computer, a video camera, a mobile computer, agoggle type display, a player using a recording medium, a digitalcamera, a projector, a portable telephone, and a portable electronicbook.